ICPetching相关论文
The Ⅲ-Ⅴ nitride material such as InN GaN has many favorable physical properties including a wide direct band-gap(0.7-3......
The etching process of the high aspect ratio of silicon deep trench is the key technology in MEMS field.Having used Oxfo......
采用AZ1500光刻胶作为掩模对GaAs和InP进行ICP刻蚀, 研究了刻蚀参数对光刻胶掩模及刻蚀图形侧壁的影响。结果表明, 光刻胶的碳化变......
